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911135

Sigma-Aldrich

TU-3

Synonym(s):

4,4′-(2λ4δ2-benzo[1,2-c:4,5-c′]bis[1,2,5]thiadiazole-4,8-diyldi-5,2-thiophenediyl)bis[2-dodecylbenzonitrile], 4,8-Bis [5-(4-cyano-3-alkylphenyl)-2-thienyl] benzo[1,2-c:4,5-c′] bis [1,2,5] thiadiazole

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About This Item

Empirical Formula (Hill Notation):
C52H60N6S4
CAS Number:
1681007-44-2
Molecular Weight:
897.33
UNSPSC Code:
12352103
NACRES:
NA.23

description

Decomposition temperature: 371 °C (Decomposition start temperature)
mobility = 2.3 cm2 / Vs (@Vsd=100V)
on / off ratio = 107
Structure: BG-TC @ SiO2 / Si
electrode: Au
film: TU-3 / CHCl3 spin coat

Assay

≥99% (HPLC)

form

powder

mol wt

897.33 g/mol

color

dark green

mp

291 °C

storage temp.

2-8°C

Application

TU-3 is a n-type organic semiconductor material with long term (year-long) stability in air. And it can be deposited from its solutions to form felxible integrated circuits in either 2D or 3D configurations.
This material achieves a high electron mobility of 2.3 cm2/Vs or more in transistors, making it highly suitable for this application. The mobility of amorphous silicon used in general LCDs and other applications is about 0.5-1cm2/Vs.

Legal Information

Organic thin film transistor containing benzobis(thiadiazole) derivatives for organic electronic device by Tanaka, Yasuhiro; Kakita, Kazunari; Machida, Toshikazu From Jpn. Kokai Tokkyo Koho (2017), JP 2017079319 A 20170427.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Scientific reports, 6, 25714-25714 (2016-05-10)
Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types
Jimin Kwon et al.
Nature communications, 10(1), 54-54 (2019-01-04)
Direct printing of thin-film transistors has enormous potential for ubiquitous and lightweight wearable electronic applications. However, advances in printed integrated circuits remain very rare. Here we present a three-dimensional (3D) integration approach to achieve technology scaling in printed transistor density

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