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Sigma-Aldrich

Aluminum nitride

powder, -200 mesh, 99.8% trace metals basis

Synonym(s):

Aluminum mononitride

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About This Item

Linear Formula:
AlN
CAS Number:
24304-00-5
Molecular Weight:
40.99
EC Number:
246-140-8
MDL number:
MFCD00003429
UNSPSC Code:
12352300
PubChem Substance ID:
329766539
NACRES:
NA.23

Assay

99.8% trace metals basis

form

powder

particle size

-200 mesh

mp

>2200 °C (lit.)

density

3.26 g/mL at 25 °C (lit.)

SMILES string

N#[Al]

InChI

1S/Al.N

InChI key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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Application

Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.

Pictograms

Health hazardEnvironment
GHS08,GHS09

Signal Word

Danger

Hazard Statements

H372,H410

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

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Ambacher, O.
Journal of Physics D: Applied Physics, 31, 2653-2653 (1998)
Strite, S.; Morkoc, H.
J. Vac. Sci. Technol. B, 10, 1237-1237 (1992)
Fang, X.; et al.
Journal of Materials Chemistry, 18, 509-509 (2008)
Emmanuel Defay et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 58(12), 2516-2520 (2011-12-01)
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to
Ning Liu et al.
ACS applied materials & interfaces, 1(9), 1927-1930 (2010-04-02)
Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively deposited in the hollow region of
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