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333395

Sigma-Aldrich

Dichlorosilane

≥99.99% trace metals basis

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About This Item

Linear Formula:
Cl2SiH2
CAS Number:
4109-96-0
Molecular Weight:
101.01
EC Number:
223-888-3
MDL number:
MFCD00011600
UNSPSC Code:
12352300
PubChem Substance ID:
24860129
Pricing and availability is not currently available.

vapor density

3.5 (vs air)

vapor pressure

1254 mmHg ( 20 °C)

description

film resistivity > 50 Ω-cm

Assay

≥99.99% trace metals basis

autoignition temp.

136 °F

expl. lim.

99 %

bp

8.3 °C (lit.)

mp

−122 °C (lit.)

SMILES string

Cl[SiH2]Cl

InChI

1S/Cl2H2Si/c1-3-2/h3H2

InChI key

MROCJMGDEKINLD-UHFFFAOYSA-N

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General description

Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.[1][2][3][4]

Application

DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.[3][4][5][6]

Signal Word

Danger

Hazard Statements

H220,H280,H314,H330

Hazard Classifications

Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B

Supplementary Hazards

EUH014,EUH071

Storage Class Code

2A - Gases

WGK

WGK 1

Flash Point(F)

-34.6 °F

Flash Point(C)

-37 °C

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
00925BJ
01025BJ
00825BJ
04127JH
13131JH

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Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Soujanya N Jampala et al.
Journal of agricultural and food chemistry, 53(9), 3618-3625 (2005-04-28)
The structure and rheological properties of xanthan gum (XG) modified in a cold plasma environment were investigated. XG was functionalized in a capacitively coupled 13.56-MHz radio frequency dichlorosilane (DS)-plasma conditions and, consecutively, in situ aminated by ethylenediamine. The surface structure
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
Dichlorosilane-derived nano-silicon inside hollow carbon spheres as a high-performance anode for Li-ion batteries.
Jaumann T, et al.
Journal of Material Chemistry C, 5(19), 9262-9271 (2017)
J Komatsu et al.
Journal of biomolecular structure & dynamics, 22(3), 331-337 (2004-10-12)
This report shows a new DNA stretching method using migration of an ice-water interface. DNA molecules were stretched accompanying the migration of the solid-liquid interface and immobilized in frozen area. This simple method needs no chemical modification to keep DNA
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