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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monoarsenide

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About This Item

Linear Formula:
GaAs
CAS Number:
1303-00-0
Molecular Weight:
144.64
EC Number:
215-114-8
MDL number:
MFCD00011017
UNSPSC Code:
12352300
PubChem Substance ID:
24883832
NACRES:
NA.23

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

SMILES string

[Ga]#[As]

InChI

1S/As.Ga

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Physical properties

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physical form

cubic (a = 5.6533 Å)

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H360F,H372

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

Target Organs

Respiratory system,hematopoietic system

Storage Class Code

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

PRTR

Specified Class I Designated Chemical Substances

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

651486-BULK:
651486-VAR:
651486-1EA-PW:
651486-1EA:

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
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