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366870

Sigma-Aldrich

Indium(III) phosphide

pieces, 3-20 mesh, 99.998% trace metals basis

Synonym(s):

Indium monophosphide, Indium phosphide

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About This Item

Linear Formula:
InP
CAS Number:
22398-80-7
Molecular Weight:
145.79
EC Number:
244-959-5
MDL number:
MFCD00016153
UNSPSC Code:
12352300
PubChem Substance ID:
24862718
NACRES:
NA.23

Quality Level

100

Assay

99.998% trace metals basis

form

pieces

reaction suitability

reagent type: catalyst
core: indium

particle size

3-20 mesh

SMILES string

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Related Categories

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H361,H372

Precautionary Statements

P201 - P308 + P313

Hazard Classifications

Carc. 1B - Repr. 2 - STOT RE 1

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

PRTR

Class I Designated Chemical Substances

FSL

Group 3: Spontaneously combustible substances and water- reactive materials
Metal phosphides
Hazardous rank I
1st spontaneously combustible materials and water reactive materials

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

366870-5G:
366870-1G:4548173321868
366870-VAR:
366870-BULK:

Certificates of Analysis (COA)

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Jens Hofrichter et al.
Optics express, 20(9), 9363-9370 (2012-04-27)
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9)
Vasilis Katopodis et al.
Optics express, 20(27), 28538-28543 (2012-12-25)
We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT electronics
Xuan Zhang et al.
Nanotechnology, 23(27), 275103-275103 (2012-06-20)
Direct comparisons of different types of nanoparticles for drug delivery have seldom been performed. In this study we compare the physical properties and cellular activity of doxorubicin (Dox) conjugates to gold nanoparticles (Au) and InP quantum dots of comparable diameter.
Myung-Joon Kwack et al.
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
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