366870
Indium(III) phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Sinónimos:
Indium monophosphide, Indium phosphide
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About This Item
Productos recomendados
Quality Level
assay
99.998% trace metals basis
form
pieces
reaction suitability
reagent type: catalyst
core: indium
particle size
3-20 mesh
SMILES string
P#[In]
InChI
1S/In.P
InChI key
GPXJNWSHGFTCBW-UHFFFAOYSA-N
signalword
Danger
hcodes
pcodes
Hazard Classifications
Carc. 1B - Repr. 2 - STOT RE 1
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk_germany
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
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Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
ACS nano, 6(11), 9679-9689 (2012-10-16)
Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface
Optics express, 20(24), 26696-26703 (2012-11-29)
An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping
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