Saltar al contenido
Merck
Todas las fotos(3)

Key Documents

View All Documentation

203424

Sigma-Aldrich

Indium(III) oxide

99.998% trace metals basis

Sinónimos:

Diindium trioxide, Indium sesquioxide

Iniciar sesiónpara Ver la Fijación de precios por contrato y de la organización
Todas las fotos(3)

About This Item

Fórmula empírica (notación de Hill):
In2O3
Número de CAS:
1312-43-2
Peso molecular:
277.63
EC Number:
215-193-9
MDL number:
MFCD00011060
UNSPSC Code:
12352303
PubChem Substance ID:
24852170
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

100

assay

99.998% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: indium

density

7.18 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[In]O[In]=O

InChI

1S/2In.3O

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

¿Está buscando productos similares? Visita Guía de comparación de productos

Application

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

Elija entre una de las versiones más recientes:

Certificados de análisis (COA)

Lot/Batch Number
MKCW5515
MKCW5238
MKCV2863
MKCV2374
MKCT5564

¿No ve la versión correcta?

Si necesita una versión concreta, puede buscar un certificado específico por el número de lote.

Busque por un COA

¿Ya tiene este producto?

Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.

Visite la Librería de documentos

Los clientes también vieron

Slide 1 of 4

1 of 4

Indium(III) sulfate anhydrous, &#8805;98.0% (T)

Sigma-Aldrich

57151

Indium(III) sulfate

Indium(III) chloride 99.999% trace metals basis

Sigma-Aldrich

203440

Indium(III) chloride

Indium powder, 99.99% trace metals basis

Sigma-Aldrich

277959

Indium

Indium(III) acetylacetonate &#8805;99.99% trace metals basis

Sigma-Aldrich

I3300

Indium(III) acetylacetonate

Kelvin H L Zhang et al.
ACS nano, 6(8), 6717-6729 (2012-06-30)
The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate.
Ilan Jen-La Plante et al.
Small (Weinheim an der Bergstrasse, Germany), 9(1), 56-60 (2012-11-06)
Nano popcorn: a new formation mechanism for the synthesis of hollow metal oxide nanoparticles through a melt fracture mechanism. The hollow nanoparticles are formed via brittle fracture following the generation of tensile stresses arising due to liquid-phase thermal expansion of
Yiping Fang et al.
Langmuir : the ACS journal of surfaces and colloids, 27(23), 14091-14095 (2011-10-21)
In(2)O(3)@SiO(2) core-shell nanoparticles were prepared using an organic solution synthesis approach and reverse-microemulsion technique. In order to explore the availability of various silica encapsulations, a partial phase diagram for this ternary system consisting of hexane/cyclohexane (1:29 wt), surfactant (polyoxyethylene(5)nonylphenyl ether
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Ver todos los artículos relacionados

Artículos

Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.

Ver todo

Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.

Póngase en contacto con el Servicio técnico