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357278

Sigma-Aldrich

Indium

foil, thickness 1.0 mm, 99.999% trace metals basis

Sinónimos:

Indium element

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About This Item

Fórmula empírica (notación de Hill):
In
Número de CAS:
7440-74-6
Peso molecular:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24861900
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

100

assay

99.999% trace metals basis

form

foil

resistivity

8.37 μΩ-cm

thickness

1.0 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Quantity

4.6 g = 25 × 25 mm

pictograms

Health hazard
GHS08

signalword

Danger

hcodes

H372

Hazard Classifications

STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

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Certificados de análisis (COA)

Lot/Batch Number
MKCJ3386
MKCL5779
MKBN2954V
MKBD9293V
11920PX

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Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
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