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264113

Sigma-Aldrich

Indium

beads, diam. 2-5 mm, 99.999% trace metals basis

Sinónimos:

Indium element

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About This Item

Fórmula empírica (notación de Hill):
In
Número de CAS:
7440-74-6
Peso molecular:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24855907
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

100

assay

99.999% trace metals basis

form

beads

resistivity

8.37 μΩ-cm

diam.

2-5 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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General description

Indium, a rare and stable element, exhibits exceptional properties such as high thermal and electrical conductivity. These characteristics make indium a vital component in various applications, particularly in the electronics industry, where it is used in indium tin oxide (ITO) for transparent conductive coatings in touch screens, and displays. Additionally, it is also utilized in the production of solar cells, LEDs, and other optoelectronic devices.

Application


  • Exploring Layered Disorder in Lithium-Ion-Conducting Li(3)Y(1-x)In(x)Cl(6).: Investigates the effect of indium substitution in lithium yttrium chloride solid electrolytes, enhancing ionic conductivity and stability for battery applications ( Banik et al., 2024).

  • Ultrasoft and Ultrastretchable Wearable Strain Sensors with Anisotropic Conductivity Enabled by Liquid Metal Fillers.: Develops a flexible, stretchable strain sensor using indium-based liquid metal fillers, targeting applications in wearable electronics ( Choe et al., 2022).

  • A smelting-rolling strategy for ZnIn bulk phase alloy anodes.: Describes a novel processing technique for zinc-indium alloy anodes that enhances electrochemical performance and durability in batteries ( Chai et al., 2022).

  • In-MOF-Derived Hierarchically Hollow Carbon Nanostraws for Advanced Zinc-Iodine Batteries.: Presents a method to fabricate hierarchically hollow carbon nanostructures from indium-based metal-organic frameworks, improving the energy storage capacity of zinc-iodine batteries ( Chai et al., 2022).

pictograms

Health hazard
GHS08

signalword

Danger

hcodes

H372

Hazard Classifications

STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

Certificados de análisis (COA)

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Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
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