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Merck

339164

Sigma-Aldrich

Bis(cyclopentadienyl)cobalt(II)

Sinónimos:

Cobaltocene

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About This Item

Fórmula lineal:
Co(C5H5)2
Número de CAS:
Peso molecular:
189.12
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

form

powder or crystals
solid

Quality Level

reaction suitability

core: cobalt

mp

176-180 °C (dec.) (lit.)

storage temp.

2-8°C

SMILES string

[Co].[CH]1[CH][CH][CH][CH]1.[CH]2[CH][CH][CH][CH]2

InChI

1S/2C5H5.Co/c2*1-2-4-5-3-1;/h2*1-5H;

Inchi Key

PXFGMRZPRDJDEK-UHFFFAOYSA-N

General description

Bis(cyclopentadienyl)cobalt(II) also known as cobaltocene, is an organometalliccompound that is widely used in the field of polymer synthesis, cobaltnanomaterials, and redox flow batteries.

Application

Bis(cyclopentadienyl)cobalt(II) can be used:
  • As a dopant to prepare encapsulated carbon nanotubes with high thermoelectric conversion efficiency.
  • As a CVD precursor to fabricate cobalt oxide thin films for various applications.
  • As a redox-active anode species in Li-based redox flow batteries to achieve higher energy densities and energy efficiencies.
  • As a catalyst for controlled/“living” radical polymerization of methylmethacrylate.

pictograms

FlameHealth hazard

signalword

Danger

Hazard Classifications

Carc. 2 - Flam. Sol. 2 - Muta. 2 - Resp. Sens. 1 - Skin Sens. 1

Storage Class

4.1B - Flammable solid hazardous materials

wgk_germany

WGK 3

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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A high-performance all-metallocene-based, non-aqueous redox flow battery
Yu Ding, et al.
Energy & Environmental Science, 10, 491-497 (2017)
Thin films of cobalt oxide deposited on high aspect ratio supports by atomic layer deposition
Madeleine Diskus, et al
Chem. Vap. Deposition, 17, 135-140 (2011)
Development of n-type cobaltocene-encapsulated carbon nanotubes with remarkable thermoelectric property
Takahiro Fukumaru, et al.
Scientific Reports, 5, 7951-7951 (2015)
Jacob M Clary et al.
Nanotechnology, 31(17), 175703-175703 (2020-01-09)
Highly dispersed cobalt atoms were deposited on porous alumina particles using atomic layer deposition (ALD) with a CoCp2/H2 chemistry at approximately 7 wt%. H2 did not completely reduce the cyclopentadienyl organic ligands bound to deposited Co atoms at ALD reaction
Rachel L Meyer et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 26(44), 9905-9914 (2020-03-21)
The rational control of the electrochemical properties of polyoxovanadate-alkoxide clusters is dependent on understanding the influence of various synthetic modifications on the overall redox processes of these systems. In this work, the electronic consequences of ligand substitution at the heteroion

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Atomic layer deposition meets various needs including semiconductor device miniaturization and nanoparticle coating.

Atomic layer deposition meets various needs including semiconductor device miniaturization and nanoparticle coating.

Atomic layer deposition meets various needs including semiconductor device miniaturization and nanoparticle coating.

Atomic layer deposition meets various needs including semiconductor device miniaturization and nanoparticle coating.

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