推荐产品
等級
certified reference material
agency
IRMM®
製造商／商標名
JRC
電阻係數
13-16 μΩ-cm, 20°C
bp
4742 °C (lit.)
mp
2468 °C (lit.)
密度
8.57 g/mL at 25 °C (lit.)
格式
matrix material
SMILES 字串
[Nb]
InChI
1S/Nb
InChI 密鑰
GUCVJGMIXFAOAE-UHFFFAOYSA-N
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分析報告
For more information please see:
IRMM525A
IRMM525A
法律資訊
IRMM is a registered trademark of European Commission
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
nwg
閃點（°F）
Not applicable
閃點（°C）
Not applicable
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
Christos D Malliakas et al.
Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
Evgeniy Papulovskiy et al.
Physical chemistry chemical physics : PCCP, 15(14), 5115-5131 (2013-03-02)
Ab initio DFT calculations of (93)Nb NMR parameters using the NMR-CASTEP code were performed for a series of over fifty individual niobates, and a good agreement has been found with experimental NMR parameters. New experimental and calculated (93)Nb NMR data
Jason S Pelc et al.
Optics express, 20(25), 27510-27519 (2012-12-25)
Long-distance quantum communication networks require appropriate interfaces between matter qubit-based nodes and low-loss photonic quantum channels. We implement a downconversion quantum interface, where the single photons emitted from a semiconductor quantum dot at 910 nm are downconverted to 1560 nm
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
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