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Merck

771627

Sigma-Aldrich

2,9-Bis[(4-methoxyphenyl)methyl]anthra[2,1,9-def:6,5,10-def′]diisoquinoline-1,3,8,10(2H,9H)tetrone

99%

别名:

N,N′-Bis(4-methoxybenzyl)perylene-3,4:9,10-bis(dicarboximide)

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About This Item

经验公式(希尔记法):
C40 H26 N2 O6
分子量:
630.64
EC號碼:
MDL號碼:
分類程式碼代碼:
12352103
PubChem物質ID:
NACRES:
NA.23

化驗

99%

形狀

powder

mp

120-130 °C

λmax

527, 490 nm in dichloromethane

半導體屬性

(mobility=0.5 cm2/V·s)

SMILES 字串

COc1ccc(CN2C(=O)c3ccc4c5ccc6C(=O)N(Cc7ccc(OC)cc7)C(=O)c8ccc(c9ccc(C2=O)c3c49)c5c68)cc1

InChI

1S/C40H26N2O6/c1-47-23-7-3-21(4-8-23)19-41-37(43)29-15-11-25-27-13-17-31-36-32(40(46)42(39(31)45)20-22-5-9-24(48-2)10-6-22)18-14-28(34(27)36)26-12-16-30(38(41)44)35(29)33(25)26/h3-18H,19-20H2,1-2H3

InChI 密鑰

LQDAMBYDGRGJGA-UHFFFAOYSA-N

應用

High electron transporting character (electron mobility on the order of 0.5 cm2 V-1 s-1); Perylenebis(dicarboximide)s (PDIs) can be used as n-type materials for organic fieldeffect transistors (OFETs);
Excellent candidates as electron accepting building blocks for organic photovoltaics (OPVs);
IR transparent pigment for coating application.

象形圖

Exclamation mark

訊號詞

Warning

危險聲明

危險分類

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

標靶器官

Respiratory system

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 1

閃點(°F)

Not applicable

閃點(°C)

Not applicable


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Josh Vura-Weis et al.
Journal of the American Chemical Society, 132(6), 1738-1739 (2010-01-26)
The binding energy and electronic coupling of perylenediimide (PDI) pi-stacked dimers were calculated using M06-2X/6-31++G** as a function of stacking geometry. Due to shallow minima in the potential energy surface, electronic coupling can vary by over an order of magnitude
M Carmen Ruiz Delgado et al.
Journal of the American Chemical Society, 132(10), 3375-3387 (2010-02-20)
Perylene tetracarboxylic diimide (PTCDI) derivatives stand out as one of the most investigated families of air-stable n-type organic semiconductors for organic thin-film transistors. Here, we use density functional theory to illustrate how it is possible to control the charge-transport parameters

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