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方案
97%
mp
106-111 °C
半导体性质
N-type (mobility>10−2 cm2/V·s) (from a 2 wt% N-DMBI doped PCBM transistor)
SMILES字符串
CN1C(C2=CC=C(N(C)C)C=C2)N(C)C3=C1C=CC=C3
InChI
1S/C17H21N3/c1-18(2)14-11-9-13(10-12-14)17-19(3)15-7-5-6-8-16(15)20(17)4/h5-12,17H,1-4H3
InChI key
AKIIMLCQTGCWQQ-UHFFFAOYSA-N
一般描述
This material is shown to behave as a n-type dopant for n-channel Organic Thin Film Transistors (OTFTs).
警示用语：
Warning
危险声明
危险分类
Acute Tox. 4 Oral
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
Peng Wei et al.
Journal of the American Chemical Society, 132(26), 8852-8853 (2010-06-18)
We present here the development of a new solution-processable n-type dopant, N-DMBI. Our experimental results demonstrated that a well-known n-channel semiconductor, [6,6]-phenyl C(61) butyric acid methyl ester (PCBM), can be effectively doped with N-DMBI by solution processing; the film conductivity
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