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蒸汽密度
3.5 (vs air)
蒸汽壓力
1254 mmHg ( 20 °C)
描述
film resistivity > 50 Ω-cm
化驗
≥99.99% trace metals basis
自燃溫度
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES 字串
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI 密鑰
MROCJMGDEKINLD-UHFFFAOYSA-N
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一般說明
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
應用
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
訊號詞
Danger
危險分類
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
安全危害
儲存類別代碼
2A - Gases
水污染物質分類（WGK）
WGK 1
閃點（°F）
-34.6 °F
閃點（°C）
-37 °C
個人防護裝備
Faceshields, Gloves, Goggles, multi-purpose combination respirator cartridge (US)
T Chen et al.
Electrophoresis, 20(12), 2412-2419 (1999-09-28)
The feasibility of polymeric phases based on a silicone polymer backbone as pseudostationary phases for electrokinetic chromatography has been investigated. Silicone phases were studied because of the range of chemistries that could be developed based on these backbones, and because
J Komatsu et al.
Journal of biomolecular structure & dynamics, 22(3), 331-337 (2004-10-12)
This report shows a new DNA stretching method using migration of an ice-water interface. DNA molecules were stretched accompanying the migration of the solid-liquid interface and immobilized in frozen area. This simple method needs no chemical modification to keep DNA
H Nakashima et al.
Archives of toxicology, 70(3-4), 218-223 (1996-01-01)
Using male ICR mice, the LC50 and acute and subacute inhalation toxicity of dichlorosilane (SiH2Cl2, DCS) and the fate of DCS released into the air were investigated. DCS resolved and minute particles including silicon and chloride were observed, when DCS
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
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