推荐产品
化驗
99.999% trace metals basis
形狀
chips
電阻係數
53 Ω-cm, 20°C
bp
2830 °C (lit.)
mp
937 °C (lit.)
密度
5.35 g/mL at 25 °C (lit.)
SMILES 字串
[Ge]
InChI
1S/Ge
InChI 密鑰
GNPVGFCGXDBREM-UHFFFAOYSA-N
正在寻找类似产品? 访问 产品对比指南
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類（WGK）
WGK 3
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
其他客户在看
Maurizio Mattesini et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035601-035601 (2012-12-12)
The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr(2)GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA + U). The effective U value has been computed within the
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
商品
Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系技术服务部门