553123

Tetrakis(ethylmethylamido)hafnium(IV)

≥99.99% trace metals basis

• Sinónimos: TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
• Fórmula lineal: [(CH₃)(C₂H₅)N]₄Hf
• Número de CAS: 352535-01-4
• Peso molecular: 410.90
• Número MDL: MFCD03427130
• Código UNSPSC: 12352103
• ID de la sustancia en PubChem: 24879306
• NACRES: NA.23

Propiedades

• Nivel de calidad: 200
• Ensayo: ≥99.99% trace metals basis
• Formulario: liquid
• idoneidad de la reacción: core: hafnium
• impurezas: Purity excludes ~2000 ppm Zirconium
• bp: 78 °C/0.01 mmHg (lit.)
• mp: <-50 °C
• densidad: 1.324 g/mL at 25 °C (lit.)
• cadena SMILES: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
• InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
• Clave InChI: NPEOKFBCHNGLJD-UHFFFAOYSA-N

Descripción

Descripción general

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.

Aplicación

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO₂) thin films. Because HfO₂ has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication.

TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100).[1] Researchers have also used it to deposit thin films ofHfO₂ on 2D materials, like MoS₂.[2]

[2]
TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf₁-xZrxO₂ thin films on MoS₂ phototransistors.[3] Researchers have also deposited thin films of hafnium nitride (Hf₃N₄) by ALD alternatively pulsing TEMAH and ammonia.[4]

Características y beneficios

• Thermally stable.
• It has sufficient volatility and is suitable for use in vapor deposition.
• Completely self-limiting surface reactions.

Información de seguridad

• Pictogramas: GHS02,GHS05,GHS07
• Palabra de señalización: Danger
• Frases de peligro: H225,H260,H302,H314,H335
• Consejos de prudencia: P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
• Clasificaciones de peligro: Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
• Órganos de actuación: Respiratory system
• Riesgos supl.: EUH014
• Código de clase de almacenamiento: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• Clase de riesgo para el agua (WGK): WGK 3
• Punto de inflamabilidad (°F): 51.8 °F - closed cup
• Punto de inflamabilidad (°C): 11 °C - closed cup
• Equipo de protección personal: Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter