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651494

Sigma-Aldrich

Gallium phosphide

(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monophosphide

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About This Item

Linear Formula:
GaP
CAS Number:
12063-98-8
Molecular Weight:
100.70
EC Number:
235-057-2
MDL number:
MFCD00016109
UNSPSC Code:
12352300
PubChem Substance ID:
24883833
NACRES:
NA.23

Quality Level

100

form

(single crystal substrate)

resistivity

~0.3 Ω-cm

diam. × thickness

2 in. × 0.5 mm

mp

1480 °C

density

4.13 g/mL at 25 °C

semiconductor properties

<111>

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

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Physical properties

Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC

Physical form

cubic (a = 5.4505Å)

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H319,H335

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKBX6897V
MKBW8491V
10819AD

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Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
Cecilia E Linsmeier et al.
Biomaterials, 29(35), 4598-4604 (2008-09-20)
Neural devices may play an important role in the diagnosis and therapy of several clinical conditions, such as stroke, trauma or neurodegenerative disorders, by facilitating motor and pain control. Such interfaces, chronically implanted in the CNS, need to be biocompatible
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
G Chen et al.
Nano letters, 8(5), 1341-1346 (2008-04-22)
We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire.
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Protocols

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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