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Merck

679208

Sigma-Aldrich

Trichlormethylsilan

deposition grade, ≥98% (GC), ≥99.99% (as metals)

Synonym(e):

Methyltrichlorsilan

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About This Item

Lineare Formel:
CH3SiCl3
CAS-Nummer:
Molekulargewicht:
149.48
Beilstein:
1361381
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12352103
PubChem Substanz-ID:
NACRES:
NA.23

Qualität

deposition grade

Dampfdichte

5.2 (vs air)

Dampfdruck

150 mmHg ( 25 °C)

Assay

≥98% (GC)
≥99.99% (as metals)

Form

liquid

Selbstzündungstemp.

>760 °F

Expl.-Gr.

11.9 %

Brechungsindex

n20/D 1.411 (lit.)

bp

66 °C (lit.)

Dichte

1.273 g/mL at 25 °C (lit.)

SMILES String

C[Si](Cl)(Cl)Cl

InChI

1S/CH3Cl3Si/c1-5(2,3)4/h1H3

InChIKey

JLUFWMXJHAVVNN-UHFFFAOYSA-N

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Signalwort

Danger

Gefahreneinstufungen

Acute Tox. 3 Inhalation - Acute Tox. 4 Dermal - Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1A - STOT SE 3

Zielorgane

Respiratory system

Lagerklassenschlüssel

3 - Flammable liquids

WGK

WGK 1

Flammpunkt (°F)

46.4 °F - closed cup

Flammpunkt (°C)

8 °C - closed cup


Analysenzertifikate (COA)

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W H Mullen et al.
Clinica chimica acta; international journal of clinical chemistry, 157(2), 191-198 (1986-06-15)
An enzyme electrode is described based upon the enzyme lactate oxidase (EC 1.1.3.2) coupled to an H2O2 sensor. Use of an organosilane-treated microporous membrane over the enzyme layer, allows responses linear to 18 mmol/l L-lactate with response times of 1-3
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1475-1486 (2007-02-06)
The kinetics for the previously proposed 114-reaction mechanism for the chemical vapor deposition (CVD) process that leads from methyltrichlorosilane (MTS) to silicon carbide (SiC) are examined. Among the 114 reactions, 41 are predicted to proceed with no intervening barrier. For
Ildikó Szabó et al.
Biopolymers, 88(1), 20-28 (2006-10-26)
Rearrangement of disulfide bonds during the synthesis of alpha-conotoxin GI using PhS(O)Ph/CH(3)SiCl(3) oxidation procedure was observed. We have demonstrated that the protecting scheme (order of acetamidomethyl (Acm) and (t)Bu protecting groups) of the Cys residues as well as the reaction
Yingbin Ge et al.
The journal of physical chemistry. A, 114(6), 2384-2392 (2010-01-29)
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1462-1474 (2007-02-06)
Structures and energies of the gas-phase species produced during and after the various unimolecular decomposition reactions of methyltrichlorosilane (MTS) with the presence of H2 carrier gas were determined using second-order perturbation theory (MP2). Single point energies were obtained using singles

Artikel

Deposition Grade Silanes, fully characterized by chemical analysis and nuclear magnetic resonance (NMR) with greater than 98% purity, for Sol-Gel Processes.

Reactive silicone chemistry: Focus on pure silicon production, polymerizations, and controlled stereochemistry reactions.

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

Silica's versatility spans various industries, including biomedical applications.

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