Saltar al contenido
Merck

463043

Sigma-Aldrich

Disilane

electronic grade

Sinónimos:

Disilicane, Disilicoethane, Disilicon hexahydride, Silicoethane, Silicon hydride (Si2 H6 )

Iniciar sesiónpara Ver la Fijación de precios por contrato y de la organización


About This Item

Fórmula lineal:
Si2H6
Número de CAS:
Peso molecular:
62.22
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

grade

electronic grade

Quality Level

assay

≥99.998% chemical purity basis

form

gas

impurities

≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes

bp

−14.5 °C (lit.)

mp

−132.6 °C (lit.)

transition temp

critical temperature 150.9 °C

SMILES string

[SiH3][SiH3]

InChI

1S/H6Si2/c1-2/h1-2H3

InChI key

PZPGRFITIJYNEJ-UHFFFAOYSA-N

General description

Atomic number of base material: 14 Silicon

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

signalword

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

2A - Gases

wgk_germany

WGK 3

flash_point_f

<50.0 °F - closed cup

flash_point_c

< 10 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)


Elija entre una de las versiones más recientes:

Certificados de análisis (COA)

Lot/Batch Number

¿No ve la versión correcta?

Si necesita una versión concreta, puede buscar un certificado específico por el número de lote.

¿Ya tiene este producto?

Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.

Visite la Librería de documentos

Gen He et al.
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 4(11), 1700158-1700158 (2017-12-05)
Establishing low-cost, high-throughput, simple, and accurate single nucleotide polymorphism (SNP) genotyping techniques is beneficial for understanding the intrinsic relationship between individual genetic variations and their biological functions on a genomic scale. Here, a straightforward and reliable single-molecule approach is demonstrated
Journal of Applied Physiology, 81, 205-205 (1997)
Jorge Alamán et al.
Polymers, 11(3) (2019-04-10)
Accurate positioning of luminescent materials at the microscale is essential for the further development of diverse application fields including optoelectronics, energy, biotechnology and anti-counterfeiting. In this respect, inkjet printing has recently attracted great interest due to its ability to precisely
O D Supekar et al.
Nanotechnology, 27(49), 49LT02-49LT02 (2016-11-12)
Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin
Jie Li et al.
ACS nano, 11(12), 12789-12795 (2017-12-08)
F

Artículos

Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand.

Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.

Póngase en contacto con el Servicio técnico