337323
Copper(II) 2-ethylhexanoate
Sinónimos:
2-Ethylhexanoic acid copper(2+) salt, Copper bis(2-ethylhexanoate), Copper di(2-ethylhexanoate), Copper(2+) 2-ethylhexanoate, Cupric bis(2-ethylhexanoate)
About This Item
Productos recomendados
form
powder or chunks
solid
Quality Level
composition
Cu, 17.0-19.0% EDTA titration
reaction suitability
core: copper
reagent type: catalyst
mp
252 °C (dec.) (lit.)
SMILES string
CCCCC(CC)C(=O)O[Cu]OC(=O)C(CC)CCCC
InChI
1S/2C8H16O2.Cu/c2*1-3-5-6-7(4-2)8(9)10;/h2*7H,3-6H2,1-2H3,(H,9,10);/q;;+2/p-2
InChI key
SEKCXMNFUDONGJ-UHFFFAOYSA-L
Application
- Copper catalyzed Heck-like cyclizations of oxime esters: Discusses the catalytic role of Copper(II) 2-ethylhexanoate in cyclization reactions and its potential reduction or disproportionation under certain conditions (Faulkner et al., 2014).
- A Copper‐Mediated Oxidative Coupling Route to 3H‐ and 1H‐Indoles: Utilizes Copper(II) 2-ethylhexanoate for synthesizing indoles, showcasing its effectiveness in facilitating novel chemical transformations (Drouhin & Taylor, 2015).
- Cu (II) carboxylate arene C─H functionalization: Details how Copper(II) 2-ethylhexanoate is used in nonradical pathways for functionalizing aromatic compounds, significantly advancing synthetic chemistry methodologies (Kong et al., 2022).
- Decarboxylative olefination of activated aliphatic acids: Describes the catalytic capabilities of Copper(II) 2-ethylhexanoate in decarboxylative olefination processes, enhancing the efficiency and scope of organic syntheses (Tlahuext-Aca et al., 2018).
signalword
Danger
hcodes
Hazard Classifications
Repr. 1B
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk_germany
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Artículos
Copper metal deposition processes are an essential tool for depositing interconnects used in microelectronic applications, giving group 11 (coinage metals: Copper, Silver, and Gold) an important place in atomic layer deposition (ALD) process development.
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