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Key Documents

FIPMS223

Sigma-Aldrich

Back-gated OFET Interdigitated Substrate

Au source/drain, 90 nm SiO2 gate-insulator, varied W/L from 500 to 4000, 16 transistors per chip, chips (diced)

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About This Item

UNSPSC Code:
43211915
NACRES:
NA.23

form

chips (diced)

packaging

pack of 1 (wafer of 60 diced chips)

storage temp.

15-25°C

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General description

Substrate: 150 mm wafer according to semiconductor standard (used for bottom-gate)
Layer structure:

  • Gate: n-doped silicon (doping at wafer surface: n~3x1017/ cm3)
  • Gate oxide: 90 nm ± 10 nm SiO2 (thermal oxidation)
  • Drain/source: 30 nm Au with 10 nm high work function adhesion layer (ITO), by lift-off technique
  • Protection: resist AR PC 5000/3.1 (soluble in AZ-Thinner or acetone)
  • Layout: see images
  • Test chip size: 15 x 15 mm2
  • No. of chips: 60 per wafer
  • Contact pads: 0.5 x 0.5 mm2
  • No. of transistors: 16 per chip

4 x transistors L= 2.5 μm W= 10 mm
4 x transistors L= 5 μm W= 10 mm
4 x transistors L= 10 μm W= 10 mm
4 x transistors L= 20 μm W= 10 mm

Application

Back-gated OFET Interdigitated Substrate (organic field-effect transistor) can be used in the fabrication of chemical sensors for potential usage in pH sensing and detection of immunoassays. It can also be used in the fabrication of biosensors by coating the sheets of the FET with a specific antibody for the detection of SARS-CoV-2. FET based biosensors can be potentially used in clinical diagnosis, point of care testing, and on-site detection.

Packaging

diced wafer on foil with air tight packaging

Preparation Note

Recommendation for resist removal:
To guarantee a complete cleaning of the wafer / chip surface from resist residuals, please rinse by acetone and then dry the material immediately by nitrogen (compressed air).

Recommendation for material characterization:
If gate currents appear during the characterization of the field effect transistors, considerable variations could occur at the extraction of the carrier mobility. Therefore it is necessary to check the leakage currents over the reverse side (over the chip edges) of the OFET-substrates.

Storage and Stability

Store the wafers at a cool and dark place and protect them against sun.

Resist layer was applied to prevent damage from scratches.
Expiration date is the recommended period for resist removal only. After resist removal, the substrate remains functional and does not expire.

Legal Information

Product of Fraunhofer IPMS

Certificados de análisis (COA)

Busque Certificados de análisis (COA) introduciendo el número de lote del producto. Los números de lote se encuentran en la etiqueta del producto después de las palabras «Lot» o «Batch»

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Rapid detection of COVID-19 causative virus (SARS-CoV-2) in human nasopharyngeal swab specimens using field-effect transistor-based biosensor
Seo G, et al.
ACS Nano, 14(4), 5135-5142 (2020)
The impact of biosensing in a pandemic outbreak: COVID-19
Morales-Narvaez E and Dincer C
Biosensors And Bioelectronics, 14(4), 112274-112274 (2020)
Polymer composite-based OFET sensor with improved sensitivity towards nitro based explosive vapors
Dudhe RS, et al.
Sensors and Actuators B, Chemical, 148(1), 158-165 (2010)
Random CNT network and regioregular poly (3-hexylthiophen) FETs for pH sensing applications: A comparison
Munzer AM, et al.
Biochim. Biophys. Acta Gen. Subj., 1830(9), 4353-4358 (2013)

Artículos

Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.

Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.

Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.

Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.

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