Saltar al contenido
Merck
Todas las fotos(2)

Key Documents

View All Documentation

481769

Sigma-Aldrich

Gallium nitride

99.9% trace metals basis

Sinónimos:

Gallium mononitride, Gallium mononitride (GaN)

Iniciar sesiónpara Ver la Fijación de precios por contrato y de la organización
Todas las fotos(2)

About This Item

Fórmula lineal:
GaN
Número de CAS:
25617-97-4
Peso molecular:
83.73
EC Number:
247-129-0
MDL number:
MFCD00016108
UNSPSC Code:
12352300
PubChem Substance ID:
24871779
NACRES:
NA.23

assay

99.9% trace metals basis

form

powder

mp

800 °C (lit.)

SMILES string

N#[Ga]

InChI

1S/Ga.N

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

¿Está buscando productos similares? Visita Guía de comparación de productos

Application

Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.

pictograms

Exclamation mark
GHS07

signalword

Warning

hcodes

H317

Hazard Classifications

Skin Sens. 1

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type N95 (US)

Certificados de análisis (COA)

Busque Certificados de análisis (COA) introduciendo el número de lote del producto. Los números de lote se encuentran en la etiqueta del producto después de las palabras «Lot» o «Batch»

¿Ya tiene este producto?

Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.

Visite la Librería de documentos

Los clientes también vieron

Slide 1 of 1

1 of 1

Aluminum nitride powder, 10 μm, ≥98%

Sigma-Aldrich

241903

Aluminum nitride

Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Ver todos los artículos relacionados

Artículos

Conductive Polymers for Advanced Micro- and Nano-fabrication Processes

Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.

Lanthanide Ions for Solar Cells

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Lanthanide Ions for Solar Cells

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Lanthanide Ions for Solar Cells

Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.

Ver todo

Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.

Póngase en contacto con el Servicio técnico