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266809

Sigma-Aldrich

Hafnium

turnings, crystal bar, 99.7% trace metals basis

Sinónimos:

Celtium, Hafnium element

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About This Item

Fórmula empírica (notación de Hill):
Hf
Número de CAS:
7440-58-6
Peso molecular:
178.49
MDL number:
MFCD00011032
UNSPSC Code:
12141718
PubChem Substance ID:
24856162
NACRES:
NA.23

assay

99.7% trace metals basis

form

turnings, crystal bar

resistivity

29.6 μΩ-cm, 0°C

bp

4602 °C (lit.)

mp

2227 °C (lit.)

density

13.3 g/cm3 (lit.)

SMILES string

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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Storage Class

11 - Combustible Solids

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Byung-Hak Moon et al.
Journal of nanoscience and nanotechnology, 11(8), 7428-7432 (2011-11-23)
In this study, we investigated the electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials. The Ti-35Ta-xHf alloys contained from 3 wt.% to 15 wt.% Hf were manufactured by arc melting furnace. The nanotube oxide layers were formed
V Braic et al.
Journal of the mechanical behavior of biomedical materials, 10, 197-205 (2012-04-24)
Multi-principal-element (TiZrNbHfTa)N and (TiZrNbHfTa)C coatings were deposited on Ti6Al4V alloy by co-sputtering of Ti, Zr, Nb, Hf and Ta metallic targets in reactive atmosphere. The coatings were analyzed for elemental and phase compositions, crystalline structure, morphology, residual stress, hardness, friction
Michael J Sgro et al.
Chemical communications (Cambridge, England), 49(26), 2610-2612 (2013-02-07)
Hf-phosphinoamide cation complexes behave as metal-based frustrated Lewis pairs and bind one or two equivalent of CO2 and in as well can activate CO2 in a bimetallic fashion to give a pseudo-tetrahedral P2CO2 fragment linking two Hf centres.
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect
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