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Merck

264075

Sigma-Aldrich

Indium

wire, diam. 1.0 mm, 99.99% trace metals basis

Sinónimos:

Indium element

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About This Item

Fórmula empírica (notación de Hill):
In
Número de CAS:
Peso molecular:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.99% trace metals basis

form

wire

resistivity

8.37 μΩ-cm

diam.

1.0 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Application

  • Mechanistic insight into the synergy between platinum cluster and indium particle dual cocatalysts for enhanced photocatalytic water splitting.: This study explores the collaborative effect between platinum clusters and indium particles in enhancing the photocatalytic water splitting efficiency, providing a promising approach to increase hydrogen production (Zhang X et al., 2024).
  • In-situ construct CuInS(2)/Bi/Bi(2)MoO(6) S-scheme/Schottky dual heterojunctions catalyst for enhanced photocatalytic degradation of diclofenac sodium.: This article presents a dual heterojunction catalyst integrating copper indium sulfide and bismuth-based compounds for efficient photocatalytic degradation of pharmaceutical contaminants (Chen J et al., 2024).
  • The Promising Potential of Gallium Based Liquid Metals for Energy Storage.: Discusses the integration of indium with gallium in the formulation of liquid metals, highlighting their potential to revolutionize energy storage technologies (Rehman WU et al., 2024).
  • Lanthanum and Indium intermetallics nanomaterial for thermal photovoltaic applications - A full potential study.: Investigates the use of lanthanum-indium intermetallic nanomaterials in enhancing the efficiency of thermal photovoltaic cells, demonstrating a significant advancement in solar energy conversion (Jayalakshmi DS et al., 2024).

Quantity

5.6 g = 1 m; 28 g = 5 m

pictograms

Health hazard

signalword

Danger

hcodes

Hazard Classifications

STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


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Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating

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