264075
Indium
wire, diam. 1.0 mm, 99.99% trace metals basis
Sinónimos:
Indium element
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About This Item
Fórmula empírica (notación de Hill):
In
Número de CAS:
Peso molecular:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23
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vapor pressure
<0.01 mmHg ( 25 °C)
Quality Level
assay
99.99% trace metals basis
form
wire
resistivity
8.37 μΩ-cm
diam.
1.0 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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Application
- Mechanistic insight into the synergy between platinum cluster and indium particle dual cocatalysts for enhanced photocatalytic water splitting.: This study explores the collaborative effect between platinum clusters and indium particles in enhancing the photocatalytic water splitting efficiency, providing a promising approach to increase hydrogen production (Zhang X et al., 2024).
- In-situ construct CuInS(2)/Bi/Bi(2)MoO(6) S-scheme/Schottky dual heterojunctions catalyst for enhanced photocatalytic degradation of diclofenac sodium.: This article presents a dual heterojunction catalyst integrating copper indium sulfide and bismuth-based compounds for efficient photocatalytic degradation of pharmaceutical contaminants (Chen J et al., 2024).
- The Promising Potential of Gallium Based Liquid Metals for Energy Storage.: Discusses the integration of indium with gallium in the formulation of liquid metals, highlighting their potential to revolutionize energy storage technologies (Rehman WU et al., 2024).
- Lanthanum and Indium intermetallics nanomaterial for thermal photovoltaic applications - A full potential study.: Investigates the use of lanthanum-indium intermetallic nanomaterials in enhancing the efficiency of thermal photovoltaic cells, demonstrating a significant advancement in solar energy conversion (Jayalakshmi DS et al., 2024).
Quantity
5.6 g = 1 m; 28 g = 5 m
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk_germany
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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