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Key Documents

911135

Sigma-Aldrich

TU-3

Sinonimo/i:

4,4′-(2λ4δ2-benzo[1,2-c:4,5-c′]bis[1,2,5]thiadiazole-4,8-diyldi-5,2-thiophenediyl)bis[2-dodecylbenzonitrile], 4,8-Bis [5-(4-cyano-3-alkylphenyl)-2-thienyl] benzo[1,2-c:4,5-c′] bis [1,2,5] thiadiazole

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About This Item

Formula empirica (notazione di Hill):
C52H60N6S4
Numero CAS:
Peso molecolare:
897.33
Codice UNSPSC:
12352103
NACRES:
NA.23

Descrizione

Decomposition temperature: 371 °C (Decomposition start temperature)
mobility = 2.3 cm2 / Vs (@Vsd=100V)
on / off ratio = 107
Structure: BG-TC @ SiO2 / Si
electrode: Au
film: TU-3 / CHCl3 spin coat

Saggio

≥99% (HPLC)

Forma fisica

powder

PM

897.33 g/mol

Colore

dark green

Punto di fusione

291 °C

Temperatura di conservazione

2-8°C

Applicazioni

TU-3 is a n-type organic semiconductor material with long term (year-long) stability in air. And it can be deposited from its solutions to form felxible integrated circuits in either 2D or 3D configurations.
This material achieves a high electron mobility of 2.3 cm2/Vs or more in transistors, making it highly suitable for this application. The mobility of amorphous silicon used in general LCDs and other applications is about 0.5-1cm2/Vs.

Note legali

Organic thin film transistor containing benzobis(thiadiazole) derivatives for organic electronic device by Tanaka, Yasuhiro; Kakita, Kazunari; Machida, Toshikazu From Jpn. Kokai Tokkyo Koho (2017), JP 2017079319 A 20170427.

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable


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Yasunori Takeda et al.
Scientific reports, 6, 25714-25714 (2016-05-10)
Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types
A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors
Mamada, et al.
Chemistry of Materials, 27, 141-141 (2015)
Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing
Takeda Y, et al.
Advanced Electronic Materials, 4(1), 1700313-1700313 (2018)
Compact Organic Complementary D-Type Flip-Flop Circuits Fabricated with Inkjet Printing
Kazuma H, et al
Advanced Electronic Materials, 3(9), 1700208-1700208 (2019)
Jimin Kwon et al.
Nature communications, 10(1), 54-54 (2019-01-04)
Direct printing of thin-film transistors has enormous potential for ubiquitous and lightweight wearable electronic applications. However, advances in printed integrated circuits remain very rare. Here we present a three-dimensional (3D) integration approach to achieve technology scaling in printed transistor density

Articoli

Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.

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