329010
Gallium arsenide
pieces, 99.999% trace metals basis
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About This Item
Formula condensata:
GaAs
Numero CAS:
Peso molecolare:
144.64
Numero CE:
Numero MDL:
Codice UNSPSC:
12352300
ID PubChem:
Prodotti consigliati
Saggio
99.999% trace metals basis
Stato
pieces
Densità
5.31 g/mL at 25 °C (lit.)
Stringa SMILE
[Ga]#[As]
InChI
1S/As.Ga
JBRZTFJDHDCESZ-UHFFFAOYSA-N
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Avvertenze
Danger
Indicazioni di pericolo
Consigli di prudenza
Classi di pericolo
Carc. 1B - Repr. 1B - STOT RE 1
Organi bersaglio
Respiratory system,hematopoietic system
Codice della classe di stoccaggio
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
Classe di pericolosità dell'acqua (WGK)
WGK 3
Punto d’infiammabilità (°F)
Not applicable
Punto d’infiammabilità (°C)
Not applicable
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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
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