Passa al contenuto
Merck
Tutte le immagini(3)

Documenti

203432

Sigma-Aldrich

Indium

powder, −60 mesh, 99.999% trace metals basis

Autenticatiper visualizzare i prezzi riservati alla tua organizzazione & contrattuali
Tutte le immagini(3)

About This Item

Formula empirica (notazione di Hill):
In
Numero CAS:
7440-74-6
Peso molecolare:
114.82
Numero CE:
231-180-0
Numero MDL:
MFCD00134048
Codice UNSPSC:
12141719
ID PubChem:
24852171
NACRES:
NA.23

Tensione di vapore

<0.01 mmHg ( 25 °C)

Saggio

99.999% trace metals basis

Forma fisica

powder

Resistività

8.37 μΩ-cm

Dimensione particelle

−60 mesh

Punto di fusione

156.6 °C (lit.)

Densità

7.3 g/mL at 25 °C (lit.)

Stringa SMILE

[In]

InChI

1S/In
APFVFJFRJDLVQX-UHFFFAOYSA-N

Cerchi prodotti simili? Visita Guida al confronto tra prodotti

Pittogrammi

FlameExclamation mark
GHS02,GHS07

Avvertenze

Danger

Indicazioni di pericolo

H228,H315,H319,H332,H335

Classi di pericolo

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Organi bersaglio

Respiratory system

Codice della classe di stoccaggio

4.1B - Flammable solid hazardous materials

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

Certificati d'analisi (COA)

Cerca il Certificati d'analisi (COA) digitando il numero di lotto/batch corrispondente. I numeri di lotto o di batch sono stampati sull'etichetta dei prodotti dopo la parola ‘Lotto’ o ‘Batch’.

Possiedi già questo prodotto?

I documenti relativi ai prodotti acquistati recentemente sono disponibili nell’Archivio dei documenti.

Visita l’Archivio dei documenti

I clienti hanno visto anche

Slide 1 of 3

1 of 3

Indium(III) oxide 99.998% trace metals basis

Sigma-Aldrich

203424

Indium(III) oxide

Manganese powder, &#8805;99.9% trace metals basis

Sigma-Aldrich

463728

Manganese

Zinc powder, &lt;150&#160;&#956;m, 99.995% trace metals basis

Sigma-Aldrich

324930

Zinc

Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of
Zi-Hui Zhang et al.
Optics express, 21(4), 4958-4969 (2013-03-14)
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched
Visualizza tutti i documenti correlati

Articoli

Discovery and Single Crystal Growth of Lanthanide Intermetallics—Interplay of Synthesis and Physical Properties

Solid state and materials chemistry have made a tremendous impact and have experienced growth in recent years, particularly for rare earthcontaining materials.

Il team dei nostri ricercatori vanta grande esperienza in tutte le aree della ricerca quali Life Science, scienza dei materiali, sintesi chimica, cromatografia, discipline analitiche, ecc..

Contatta l'Assistenza Tecnica.