647705
Silicon
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Caractéristiques en matière de développement durable
Synonyme(s) :
Silicon element
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| Taille/Référence | Disponibilité | Prix |
|---|---|---|
1 ea | Veuillez contacter notre Service Clients pour connaître la disponibilité de ce produit. | 211,00 $ |
A propos de cet article
211,00 $
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer
contains
boron as dopant
greener alternative product characteristics
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sustainability
Sustainability features
diam. × thickness
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<111>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
1 of 1
Cet article | |||
|---|---|---|---|
| description wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm | description nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis | description disks, 13mm, thickness 0.38mm, single crystal, 100% | description disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100% |
| form wafer, crystalline (cubic (a = 5.4037)) | form nanoparticles, powder or crystals | form foil | form foil |
| Quality Level 100 | Quality Level 100 | Quality Level - | Quality Level - |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| diam. × thickness 2 in. × 0.3 mm | diam. × thickness - | diam. × thickness 13 mm × 0.38 mm | diam. × thickness 15.9 mm × 0.38 mm |
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