264075
Indium
wire, diam. 1.0 mm, 99.99% trace metals basis
Synonyme(s) :
Indium element
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5.6 G
186,00 $
28 G
732,00 $
186,00 $
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5.6 G
186,00 $
28 G
732,00 $
About This Item
Formule empirique (notation de Hill) :
In
Numéro CAS:
Poids moléculaire :
114.82
Numéro CE :
Numéro MDL:
Code UNSPSC :
12141719
ID de substance PubChem :
Nomenclature NACRES :
NA.23
186,00 $
Veuillez contacter notre Service Clients pour connaître la disponibilité de ce produit.
Devis pour commande en gros
Produits recommandés
Pression de vapeur
<0.01 mmHg ( 25 °C)
Essai
99.99% trace metals basis
Forme
wire
Résistivité
8.37 μΩ-cm
Diamètre
1.0 mm
Pf
156.6 °C (lit.)
Densité
7.3 g/mL at 25 °C (lit.)
Chaîne SMILES
[In]
InChI
1S/In
Clé InChI
APFVFJFRJDLVQX-UHFFFAOYSA-N
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Catégories apparentées
Application
- Mechanistic insight into the synergy between platinum cluster and indium particle dual cocatalysts for enhanced photocatalytic water splitting.: This study explores the collaborative effect between platinum clusters and indium particles in enhancing the photocatalytic water splitting efficiency, providing a promising approach to increase hydrogen production (Zhang X et al., 2024).
- In-situ construct CuInS(2)/Bi/Bi(2)MoO(6) S-scheme/Schottky dual heterojunctions catalyst for enhanced photocatalytic degradation of diclofenac sodium.: This article presents a dual heterojunction catalyst integrating copper indium sulfide and bismuth-based compounds for efficient photocatalytic degradation of pharmaceutical contaminants (Chen J et al., 2024).
- The Promising Potential of Gallium Based Liquid Metals for Energy Storage.: Discusses the integration of indium with gallium in the formulation of liquid metals, highlighting their potential to revolutionize energy storage technologies (Rehman WU et al., 2024).
- Lanthanum and Indium intermetallics nanomaterial for thermal photovoltaic applications - A full potential study.: Investigates the use of lanthanum-indium intermetallic nanomaterials in enhancing the efficiency of thermal photovoltaic cells, demonstrating a significant advancement in solar energy conversion (Jayalakshmi DS et al., 2024).
Quantité
5.6 g = 1 m; 28 g = 5 m
Mention d'avertissement
Danger
Mentions de danger
Conseils de prudence
Classification des risques
STOT RE 1 Inhalation
Organes cibles
Lungs
Code de la classe de stockage
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
Classe de danger pour l'eau (WGK)
WGK 1
Point d'éclair (°F)
Not applicable
Point d'éclair (°C)
Not applicable
Équipement de protection individuelle
dust mask type N95 (US), Eyeshields, Gloves
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Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Highly luminescent water-soluble quaternary Zn-Ag-In-S quantum dots for tumor cell-targeted imaging.
Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Yuji Zhao et al.
Optics express, 21 Suppl 1, A53-A59 (2013-02-15)
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at
Hwa Sub Oh et al.
Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating
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