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About This Item
Linear Formula:
GaP
CAS Number:
Molecular Weight:
100.70
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Assay
99.99% trace metals basis
form
chunks
SMILES string
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
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Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
11 - Combustible Solids
WGK
WGK 2
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Marcel A Verheijen et al.
Nano letters, 7(10), 3051-3055 (2007-09-25)
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be
A Fakhr et al.
Nanotechnology, 21(16), 165601-165601 (2010-03-30)
InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size
Simone Marja Rodrigo et al.
Photomedicine and laser surgery, 27(6), 929-935 (2009-08-28)
To evaluate, using histological analysis, the systemic action and repair process of wounds produced on the back of rats and treated with red, infrared, or both lasers applied directly or indirectly to the wounds. Skin tissue repair and wound healing
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
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