This product has an acceptable appearance specification of Powder or Granules or Chunk(s). The physical form is lot-specific and reported in the product Certificate of Analysis. The particle size is not determined given the variability of the form. The material is not screened and the particle size is not controlled.
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25 G
€407.00
About This Item
Linear Formula:
PbSe
CAS Number:
Molecular Weight:
286.16
EC Number:
MDL number:
UNSPSC Code:
26111700
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99.99%
greener alternative product characteristics
Design for Energy Efficiency
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sustainability
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density
8.1 g/mL at 25 °C (lit.)
greener alternative category
, Enabling
SMILES string
[Se]=[PbH2]
InChI
1S/Pb.Se
InChI key
GGYFMLJDMAMTAB-UHFFFAOYSA-N
General description
Lead selenide has cubic rocksalt crystal structure which undergoes transition at high pressures to orthorhombic structure.2 PbSe is a semiconductor material that emits infrared radiation.[1] Heat capacity of PbSe was evaluated by Kelley-Parks-Huffman method.[2]
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Application
Packaging
Packaged in poly bottles
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2
Storage Class Code
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Listings
Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.
EU REACH Annex XVII (Restriction List)
CAS No.
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Moon Sung Kang et al.
Advanced materials (Deerfield Beach, Fla.), 25(5), 725-731 (2012-11-20)
Field-effect transistors are fabricated from thin films of Ag-doped PbSe nanocrystals to analyze the influence of electronically active impurities on electrical transport in this important material for nanocrystal applications. Data is collected as a function of nanocrystal size, dopant concentration
Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures
Popov VP, et al.
Glass Phys. Chem., 29(5), 494-500 (2003)
Wan Ki Bae et al.
Journal of the American Chemical Society, 134(49), 20160-20168 (2012-11-08)
PbSe nanocrystal quantum dots (NQDs) are a promising active material for a range of optoelectronic devices, including solar cells, high-sensitivity infrared (IR) photodetectors, and IR-emitting diodes and lasers. However, device realization has been constrained by these NQDs' chemical instability toward
Jun Yang et al.
ACS nano, 6(9), 8120-8127 (2012-08-07)
Measurements of the picosecond-time-scale dynamics of photoexcited electrons in PbSe nanorods are reported. The intraband (1Π → 1Σ) relaxation occurs with a time constant of ~500 fs, which corresponds to a fast energy-relaxation rate of ~0.6 eV/ps. The biexciton lifetime
Fangyu Yue et al.
Optics express, 21(2), 2287-2296 (2013-02-08)
Silicate- and borosilicate-based PbS:glass material and borosilicate-glass-based fibers are fabricated and analyzed. Optical properties including absorption and emission are characterized and related to growth and annealing conditions. In silicate glasses PbS volume fractions of exceeding 0.4 percent and almost octave-spanning
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