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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monoarsenide

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About This Item

Linear Formula:
GaAs
CAS Number:
1303-00-0
Molecular Weight:
144.64
EC Number:
215-114-8
MDL number:
MFCD00011017
UNSPSC Code:
12352300
PubChem Substance ID:
24883832
NACRES:
NA.23

Quality Level

100

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

SMILES string

[Ga]#[As]

InChI

1S/As.Ga

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Physical properties

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physical form

cubic (a = 5.6533 Å)

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H350,H360F,H372

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

Target Organs

Respiratory system,hematopoietic system

Storage Class Code

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
V V Solovyev et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28)
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Andrew Lee et al.
Optics express, 20(20), 22181-22187 (2012-10-06)
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
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