264059
Indium
foil, thickness 0.127 mm, 99.99% trace metals basis
Synonym(s):
Indium element
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About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
vapor pressure
<0.01 mmHg ( 25 °C)
Quality Level
Assay
99.99% trace metals basis
form
foil
resistivity
8.37 μΩ-cm
thickness
0.127 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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Application
Indium foil is thermal interface material with high conductance that is used in cryogenics. It can also be used as indium vapor source for the preparation of indium nitride nanowires on a silicon substrate. It may also be used in the time of flight secondary ion mass spectroscopy (ToF-SIMS) for the analysis of powder samples.
Quantity
2.3 g = 50 × 50 mm; 9.2 g = 100 × 100 mm
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
STOT RE 1 Inhalation
Target Organs
Lungs
Storage Class Code
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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