901268
Pure Strip
stabilized sulfuric acid-hydrogen peroxide compound
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About This Item
UNSPSC Code:
12352200
NACRES:
NA.23
Recommended Products
form
liquid
General description
Pure Strip is suitable for stripping both positive and negative photoresists in addition to other organic compounds in a variety of semiconductor, photomask, and IC photolithography compounds. High yields can be achieved due to the high purity/low particulate composition of Pure Strip.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
Advantages Pure Strip include negligible attack on exposed metal surfaces, including aluminum, vs. other acidic formulations, residue-free rinsing, and extended bath life (minimum of five days at room temperature). Pure Strip is ready to use and requires no mixing.
Application
Pure Strip may be used at room temperature or at elevated temperature. Higher temperatures will increase the activity but decrease the bath life (1 day at 60-80 °C). Substrates are stripped of photoresist and cleaned effectively with minimal attack on aluminum (approximately 35 Angstroms/minute at room temperature) and negligible attack on other metals and alloys such as titanium, Ti-tungsten, copper, tantalum silicide, and ITO.
signalword
Danger
hcodes
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A
Storage Class
8B - Non-combustible corrosive hazardous materials
wgk_germany
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Certificates of Analysis (COA)
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