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761443

Sigma-Aldrich

1,3,6,8(2H,7H)-Tetraone, 2,7-dicyclohexylbenzo[lmn][3,8]phenanthroline

98%

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About This Item

Empirical Formula (Hill Notation):
C26H26N2O4
CAS Number:
Molecular Weight:
430.50
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

assay

98%

form

solid

mp

360-365 °C

λmax

382, 362, 243 nm in chloroform

semiconductor properties

N-type (mobility=6 cm2/V·s)

SMILES string

O=C1N(C2CCCCC2)C(=O)c3ccc4C(=O)N(C5CCCCC5)C(=O)c6ccc1c3c46

InChI

1S/C26H26N2O4/c29-23-17-11-13-19-22-20(26(32)28(25(19)31)16-9-5-2-6-10-16)14-12-18(21(17)22)24(30)27(23)15-7-3-1-4-8-15/h11-16H,1-10H2

InChI key

XWDVNWORIROXKG-UHFFFAOYSA-N

General description

1,3,6,8(2H,7H)-Tetraone, 2,7-dicyclohexylbenzo[lmn][3,8]phenanthroline (NDI-cy6) is a naphthalene-diimide based polymeric semiconducting material. It forms an n-type conductive layer that facilitates the conjugating system with electron mobility of 12 cm2V-1s-1.[1][2]

Application

NDI-cy6 can be used as an electron transporting layer for the development of organic electronic devices which include organic field effect transistors (OFETs) and thin film transistors (TFTs).[3][4]

Features and Benefits

Good thermal stability and low electron injection barrier. They display a smectic phase with columnar arrangement of mesogens inside the layers when cooled from isotropic phase.[5]

pictograms

Environment

signalword

Warning

hcodes

Hazard Classifications

Aquatic Acute 1

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable


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Rapid Evaluation of Electron Mobilities at Semiconductor-Insulator Interfaces in an Ambient Atmosphere by a Contactless Microwave-Based Technique
Inoue J, et al.
ACS Omega, 2(1), 164-170 (2017)
Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors
Deepak Shukla, et al.
Chemistry of Materials, 20, 7486-7491 (2008)
Thin-film morphology control in naphthalene-diimide-based semiconductors: high mobility n-type semiconductor for organic thin-film transistors
Shukla D, et al.
Chemistry of Materials, 20(24), 7486-7491 (2008)
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Rolin C, et al.
Nature Communications, 8, 14975-14975 (2017)
Toward quantitative prediction of charge mobility in organic semiconductors: tunneling enabled hopping model
Geng H, et al.
Advanced Materials, 24(26), 3568-3572 (2012)

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