Skip to Content
MilliporeSigma
All Photos(1)

Documents

463043

Sigma-Aldrich

Disilane

electronic grade

Synonym(s):

Disilicane, Disilicoethane, Disilicon hexahydride, Silicoethane, Silicon hydride (Si2 H6 )

Sign Into View Organizational & Contract Pricing
All Photos(1)

About This Item

Linear Formula:
Si2H6
CAS Number:
1590-87-0
Molecular Weight:
62.22
EC Number:
216-466-5
MDL number:
MFCD00054678
UNSPSC Code:
12352103
PubChem Substance ID:
24869889
NACRES:
NA.23

grade

electronic grade

assay

≥99.998% chemical purity basis

form

gas

impurities

≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes

bp

−14.5 °C (lit.)

mp

−132.6 °C (lit.)

transition temp

critical temperature 150.9 °C

SMILES string

[SiH3][SiH3]

InChI

1S/H6Si2/c1-2/h1-2H3

InChI key

PZPGRFITIJYNEJ-UHFFFAOYSA-N

Related Categories

General description

Atomic number of base material: 14 Silicon

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

signalword

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

2A - Gases

wgk_germany

WGK 3

flash_point_f

<50.0 °F - closed cup

flash_point_c

< 10 °C - closed cup

ppe

Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Journal of Applied Physiology, 81, 205-205 (1997)
Gen He et al.
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 4(11), 1700158-1700158 (2017-12-05)
Establishing low-cost, high-throughput, simple, and accurate single nucleotide polymorphism (SNP) genotyping techniques is beneficial for understanding the intrinsic relationship between individual genetic variations and their biological functions on a genomic scale. Here, a straightforward and reliable single-molecule approach is demonstrated
Jorge Alamán et al.
Polymers, 11(3) (2019-04-10)
Accurate positioning of luminescent materials at the microscale is essential for the further development of diverse application fields including optoelectronics, energy, biotechnology and anti-counterfeiting. In this respect, inkjet printing has recently attracted great interest due to its ability to precisely
O D Supekar et al.
Nanotechnology, 27(49), 49LT02-49LT02 (2016-11-12)
Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin
Jie Li et al.
ACS nano, 11(12), 12789-12795 (2017-12-08)
F
View All Related Papers

Articles

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service