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244643

Sigma-Aldrich

Tin(II) oxide

≤60 micron particle size, powder, 97%

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About This Item

Linear Formula:
SnO
CAS Number:
Molecular Weight:
134.71
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.21

assay

97%

form

powder

particle size

≤60 micron

SMILES string

O=[SnH2]

InChI

1S/O.Sn

InChI key

QHGNHLZPVBIIPX-UHFFFAOYSA-N

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General description

Tin(II) oxide (SnO) is a metal oxide with wide applications in superconductivity, photovoltaics, optoelectronics as an anode, coating substrate, Schottky diode, and catalyst.

application

Tin(II) oxide has been used in the synthesis of nanofiber optic force transducer as a probe to study the mechanical phenomena in biomolecular systems.

pictograms

Health hazardExclamation mark

signalword

Danger

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Sens. 1 - STOT RE 1

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)


Certificates of Analysis (COA)

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Hydrolysis of bis (dimethylamido) tin to tin (II) oxyhydroxide and its selective transformation into tin (II) or tin (IV) oxide.
Khanderi J, et al.
Inorgorganica Chimica Acta, 427, 27-32 (2015)
A new efficient chiral catalyst system. Combined use of tin (II) oxide, trimethylsilyl triflate and chiral diamine in the asymmetric aldol reaction.
Mukaiyama T, et al.
Chemistry Letters (Jpn), 7, 1147-1150 (1990)
Tin (II) oxide carbodiimide and its relationship to SnO
Dolabdjian K, et al.
Dalton Transactions, 47(38), 13378-13383 (2018)
Tin (II) oxide: structure refinement and thermal expansion.
Pannetier J and Denes G.
Acta Crystallographica Section B, Structural Science, Crystal Engineering and Materials, 36(11), 2763-2765 (1980)
Influence of magnesium doping on the structural and optical properties of tin (II) oxide thin films deposited by electron beam evaporation
Ali SM, et al.
Materials Science in Semiconductor Processing, 16(3), 899-904 (2013)

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