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264059

Sigma-Aldrich

Indium

foil, thickness 0.127 mm, 99.99% trace metals basis

Synonym(s):

Indium element

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
7440-74-6
Molecular Weight:
114.82
EC Number:
231-180-0
MDL number:
MFCD00134048
UNSPSC Code:
12141719
PubChem Substance ID:
24855902
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Assay

99.99% trace metals basis

form

foil

resistivity

8.37 μΩ-cm

thickness

0.127 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Application

Indium foil is thermal interface material with high conductance that is used in cryogenics. It can also be used as indium vapor source for the preparation of indium nitride nanowires on a silicon substrate. It may also be used in the time of flight secondary ion mass spectroscopy (ToF-SIMS) for the analysis of powder samples.

Quantity

2.3 g = 50 × 50 mm; 9.2 g = 100 × 100 mm

Pictograms

Health hazard
GHS08

Signal Word

Danger

Hazard Statements

H372

Precautionary Statements

P260 - P264 - P270 - P314 - P501

Hazard Classifications

STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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