GF33213754
Tantalum
foil, 15mm disks, thickness 0.15mm, annealed, 99.9%
Synonym(s):
Tantalum, TA000450, Ta
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About This Item
Empirical Formula (Hill Notation):
Ta
CAS Number:
Molecular Weight:
180.95
MDL number:
UNSPSC Code:
12141741
PubChem Substance ID:
NACRES:
NA.23
Pricing and availability is not currently available.
vapor pressure
<0.01 mmHg ( 537.2 °C)
Assay
99.90%
form
foil
autoignition temp.
572 °F
manufacturer/tradename
Goodfellow 332-137-54
resistivity
13.5 μΩ-cm, 20°C
diam. × thickness
15 mm × 0.15 mm
bp
5425 °C (lit.)
mp
2996 °C (lit.)
density
16.69 g/cm3 (lit.)
SMILES string
[Ta]
InChI
1S/Ta
InChI key
GUVRBAGPIYLISA-UHFFFAOYSA-N
General description
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Yingxun Du et al.
Journal of hazardous materials, 225-226, 21-27 (2012-05-23)
In order to overcome the limitation of the application of nanoparticles, tantalum (oxy)nitrides nanotube arrays on a Ta foil were synthesized and introduced in vis (visible light)-Fenton-like system to enhance the degradation of atrazine. At first, the anodization of tantalum
Zhongli Cai et al.
The journal of physical chemistry. B, 109(10), 4796-4800 (2006-07-21)
Both monolayer and thick (20 microm) films of dry pGEM-3Zf(-) plasmid DNA deposited on tantalum foil were exposed to Al Kalpha X-rays (1.5 keV) for various times in an ultrahigh vacuum chamber. For monolayer DNA, the damage was induced mainly
J G Sen Gupta
Talanta, 32(1), 1-6 (1985-01-01)
An improved graphite furnace atomic-absorption method has been developed for the determination of Sc, Y and the rare-earth elements in silicate rocks and related materials. The method, which involves the separation of the lanthanides by ion-exchange followed by their determination
Zhongli Cai et al.
Radiation research, 165(3), 365-371 (2006-02-24)
Both thick and thin films of pGEMR-3Zf- plasmid DNA deposited on a tantalum foil were exposed to soft X rays (effective energy of 14.8 keV) for various times in air under a relative humidity of 45% (Gamma approximately 6, where
H H Pieper et al.
The Review of scientific instruments, 83(5), 055110-055110 (2012-06-07)
We present a versatile system for the preparation of oxide crystal surfaces in the ultra-high vacuum (UHV) at temperatures up to 1300 K. Thermal treatment is accomplished by direct current heating of a tantalum foil in contact with the oxide
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