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GRFETS10

Sigma-Aldrich

Graphene FET chip

S10

Synonyme(s) :

Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry

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About This Item

Code UNSPSC :
43211915
Nomenclature NACRES :
NA.23

Description

Dirac point:< 50 V
Gate Oxide material: SiO2
Gate Oxide thickness: 90 nm
Graphene field-effect mobility: >1000 cm2/V·s
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Metallization: Chromium 2 nm/Gold 50 nm
Monolayer CVD grown Graphene based field effect transistors (FET) S10
Residual charge carrier density: <2 x 1012 cm-2
Resistivity of substrate: 1-10 Ω·cm
Yield >75%

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Description générale

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Application

  • Graphene device research
  • FET based sensor research for active materials deposited on graphene
  • Chemical sensors
  • Biosensors
  • Bioelectronics
  • Magnetic sensors
  • Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Caractéristiques et avantages

Device Features:

  • State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
  • Devices are not encapsulated and can be functionalized by additives
  • Perfect platform for sensor research and development
  • 36 individual graphene FETs per chip
  • Mobilities typically > 1000 cm2/V·s

Attention

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
  • Be careful when handling the graphene FET chip.
  • Tweezers should not contact the device area directly.

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

nwg

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Certificats d'analyse (COA)

Recherchez un Certificats d'analyse (COA) en saisissant le numéro de lot du produit. Les numéros de lot figurent sur l'étiquette du produit après les mots "Lot" ou "Batch".

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Review-Field-Effect Transistor Biosensing: Devices and Clinical Applications
Syu Y C, et al.
ECS journal of solid state science and technology : JSS, 7(7), Q3196-Q3207 (2018)
Wafer-scale statistical analysis of graphene field-effect transistors-part II: analysis of device properties
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