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Sigma-Aldrich

Tetrakis(dimethylamido)hafnium(IV)

≥99.99%

Synonym(s):

TDMAH, Tetrakis(dimethylamino)hafnium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Hf
CAS Number:
19782-68-4
Molecular Weight:
354.79
MDL number:
MFCD01862473
UNSPSC Code:
12352103
PubChem Substance ID:
24869038
NACRES:
NA.23

Assay

≥99.99%

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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General description

Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe2). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.

Application

Tetrakis(dimethylamido)hafnium(IV) can be used:
  • As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.
  • As a precursor to fabricate polymer-derived ceramic nanocomposites.
  • To prepare HfO2, CeO2, and Ce-doped HfO2 thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)3] precursors with H2O via ALD method.
  • To produce Hf3N4 thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.

Analysis Note

Purity excludes ~2000 ppm Zr.

accessory

Product No.
Description
Pricing

Pictograms

FlameCorrosion
GHS02,GHS05

Signal Word

Danger

Hazard Statements

H228,H261,H314

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
Wan Joo Maeng, et al.
Applied Surface Science, 321, 214-218 (2014)
J. Eur. Ceram. Soc., 35, 2007-2015 (2015)
Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces
Kejing Li, et al.
The Journal of Physical Chemistry C, 114, 14061-14075 (2010)
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
Hector Garcia, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 31 (2013)

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