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205184

Sigma-Aldrich

Hexachlorodisilane

96%

Synonym(s):

1,1,1,2,2,2-Hexachlorodisilane, Disilicon hexachloride, HCDS

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About This Item

Linear Formula:
(SiCl3)2
CAS Number:
13465-77-5
Molecular Weight:
268.89
EC Number:
236-704-1
MDL number:
MFCD00011599
UNSPSC Code:
12352103
PubChem Substance ID:
24852311
NACRES:
NA.23

Assay

96%

form

liquid

refractive index

n20/D 1.475 (lit.)

bp

144-145.5 °C (lit.)

density

1.562 g/mL at 25 °C (lit.)

SMILES string

Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl

InChI

1S/Cl6Si2/c1-7(2,3)8(4,5)6

InChI key

LXEXBJXDGVGRAR-UHFFFAOYSA-N

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General description

Hexachlorodisilane (HCDS) is a chlorosilane used as a precursor for producing disilanes. It is a dioxidizer that is used in the production of silicon films and silicon nitride based films.

Application

HCDS can be used in the fabrication of silica aerogels by chemical vapor deposition (CVD), which can be potentially used as encapsulating agents and thermal insulators. It can also be used to synthesize 1,1,1,2,2,2-hexaamino-disilanes using CVD, which forms silicon-based films for microelectronic-based applications.
HCDS may be used as a reducing agent. It may be combined with ammonia to form silicon nitride by chemical vapor deposition(CVD) technique.

accessory

Product No.
Description
Pricing

Pictograms

Corrosion
GHS05

Signal Word

Danger

Hazard Statements

H314

Hazard Classifications

Skin Corr. 1B

Supplementary Hazards

EUH014

Storage Class Code

8A - Combustible corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
Film Properties of Low?k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia.
Tanaka M , et al.
Journal of the Electrochemical Society, 147(6), 2284-2289 (2000)
Initial Reaction of Hexachlorodisilane on Amorphous Silica Surface for Atomic Layer Deposition Using Density Functional Theory.
Kim K, et al.
Journal of the Korean Ceramic Society, 54(5), 443-447 (2017)
Use of hexachlorodisilane as a reducing agent. Stereospecific deoxygenation of acyclic phosphine oxides.
Naumann K, et al.
Journal of the American Chemical Society, 91(25), 7012-7023 (1969)
Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films.
Taylor, R. C., & Scott, B. A.
Journal of the Electrochemical Society, 136(8), 2382-2386 (1989)
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