69860
Molybdenum(IV) sulfide
powder
Synonym(s):
Molybdenum disulfide
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All Photos(3)
About This Item
Empirical Formula (Hill Notation):
MoS2
CAS Number:
Molecular Weight:
160.07
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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form
powder
particle size
~6 μm (max. 40 μm)
density
5.06 g/mL at 25 °C (lit.)
SMILES string
S=[Mo]=S
InChI
1S/Mo.2S
InChI key
CWQXQMHSOZUFJS-UHFFFAOYSA-N
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General description
Molybdenum disulfide is a two dimensional layered material. Monolayers of transition metal dichalcogenides (TMDs)exhibit photoconductivity. The layers of the TMD can be mechanically or chemicaly exfoliated to form nanosheets.
Application
Acidic solution of MoS2 particles was used to catalyze hydrogen evolution at a water 1,2-dichloroethane interface. MoS2 was dispersed in N-methyl-pyrrolidone to form exfoliated MoS2 flakes of various sizes. MoS2 ink was used for inkjet printer. MoS2 may find potential applications in electronics and optoelectronics.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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"Inkjet Printing of MoS2
Li J, et al.
Advances in Functional Materials, 24(41), 6524-6531 (2014)
Hydrogen evolution at polarised liquid/liquid interfaces catalyzed by molybdenum disulfide.
Hatay I, et al.
Energy & Environmental Science, 4(10), 4246-4251 (2011)
Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size
O?Neill A, et al.
Chemistry of Materials, 24(12), 2414- 2421 (2012)
Woo Jong Yu et al.
Nature materials, 12(3), 246-252 (2012-12-18)
Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here
A Castellanos-Gomez et al.
Nano letters, 12(6), 3187-3192 (2012-05-31)
Single-layer MoS(2) is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS(2) is an indirect bandgap semiconductor similar to silicon, with a gap of
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