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MilliporeSigma

331635

Sigma-Aldrich

Tetramethylammonium hydroxide solution

25 wt. % in H2O

Sinónimos:

TMAH solution

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About This Item

Fórmula lineal:
(CH3)4N(OH)
Número de CAS:
Peso molecular:
91.15
Beilstein/REAXYS Number:
3558708
MDL number:
UNSPSC Code:
12352100
PubChem Substance ID:
NACRES:
NA.21

vapor pressure

17.5 mmHg ( 20 °C)

Quality Level

form

liquid

concentration

25 wt. % in H2O

refractive index

n20/D 1.3806

density

1.016 g/mL at 25 °C

SMILES string

[OH-].C[N+](C)(C)C

InChI

1S/C4H12N.H2O/c1-5(2,3)4;/h1-4H3;1H2/q+1;/p-1

InChI key

WGTYBPLFGIVFAS-UHFFFAOYSA-M

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General description

Tetramethylammonium hydroxide solution is commonly used as a strong base and nucleophilic source in organic synthesis reactions.

Application

Tetramethylammonium hydroxide is a quaternary ammonium salt generally used as an anisotropic etchant for silicon due to its high silicon etching rate.
Tetramethylammonium hydroxide solution (25 wt.% solution in water) may be used as a base for pH adjustment to obtain hexagonal mesoporous aluminophosphate (TAP).

signalword

Danger

Hazard Classifications

Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Aquatic Chronic 2 - Eye Dam. 1 - Skin Corr. 1B - STOT RE 1 Dermal - STOT SE 1

target_organs

Central nervous system, Liver,thymus

Storage Class

6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter


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eEROS (Encyclopedia of Reagents for Organic Synthesis) (2001)
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Journal of Micromechanics and Microengineering, 15(11), 2028-2028 (2005)
The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layer.
Chen PH, et al.
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