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MilliporeSigma

931977

Sigma-Aldrich

N4,N4-Di(biphenyl-4-yl)-N4′-(naphthalen-1-yl)-N4′-phenyl-biphenyl-4,4′-diamine

≥99% (HPLC)

Sinónimos:

N,N-Bis(biphenyl-4-yl)-N′-(naphthalene-1-yl)-N′-phenylbenzidine, N-Phenyl-N-[4-[4-(4-phenyl-N-(4-phenylphenyl)anilino)phenyl]phenyl]naphthalen-1-amine

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About This Item

Fórmula empírica (notación de Hill):
C52H38N2
Número de CAS:
Peso molecular:
690.87
MDL number:
UNSPSC Code:
12352116
NACRES:
NA.23

grade

sublimed grade

Quality Level

assay

≥99% (HPLC)

solubility

chloroform: soluble
dichloromethane: soluble
toluene: soluble

orbital energy

HOMO 5.5 eV 
LUMO 2.3 eV 

Application

N4,N4-Di(biphenyl-4-yl)-N4′-(naphthalen-1-yl)-N4′-phenyl-biphenyl-4,4′-diamine is mostly used as Hole Transport Layer (HTL) / Electron Blocking Layer (EBL) material in organic light emitting diode devices.
N4,N4-Di(biphenyl-4-yl)-N4′-(naphthalen-1-yl)-N4′-phenyl-biphenyl-4,4′-diamine is primarily used as a hole transport material in organic electronic devices such as organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) devices. It has been investigated for its use in other electronic applications, such as organic field-effect transistors (OFETs) and organic photodetectors. Its high hole mobility and favorable charge transport characteristics make it suitable for these applications where efficient hole transport is required.

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable


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Visite la Librería de documentos

Hole mobility of N, N-bis (naphthalen-1-yl)-N, N-bis (phenyl) benzidine investigated by using space-charge-limited currents.
Chu Ta-Ya, et al.
Applied Physics Letters, 90, 203512-203512 (2007)
Controlling triplet?triplet upconversion and singlet-triplet annihilation in organic light-emitting diodes for injection lasing.
Shukla A, et al.
Communications materials (2022)
Influence of the thickness of N, N'-Bis(naphthalene-1-yl)- N, N'-bis(phenyl) benzidine layer on the performance of organic light-emitting diodes.
Jiao B, et al.
Applied Physics. A, Materials Science & Processing (2009)

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