759414
Tetraethyl orthosilicate
packaged for use in deposition systems
Synonym(s):
Tetraethyl orthosilicate, Orthosilicic acid tetraethyl ester, Silicon tetraethoxide, Tetraethoxysilane, Tetraethoxysilicon(IV), Tetraethyl silicate, TEOS
About This Item
Recommended Products
vapor density
7.2 (vs air)
Quality Level
vapor pressure
<1 mmHg ( 20 °C)
Assay
≥99.5% (GC)
form
liquid
refractive index
n20/D 1.382 (lit.)
bp
168 °C (lit.)
density
0.933 g/mL at 20 °C (lit.)
SMILES string
CCO[Si](OCC)(OCC)OCC
InChI
1S/C8H20O4Si/c1-5-9-13(10-6-2,11-7-3)12-8-4/h5-8H2,1-4H3
InChI key
BOTDANWDWHJENH-UHFFFAOYSA-N
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Application
- Si oxide
- Oxycarbide
- Doped silicate
- Silanol
- Siloxane polymer
- Organosilicon thin films
The films can be deposited at low temperatues (<250 °C). TEOS is also used to deposit mesoporous and nanoporous thin films of silica. These porous films can be doped during deposition to further enhance their properties.
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Liq. 3 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
3 - Flammable liquids
WGK
WGK 1
Flash Point(F)
113.0 °F - closed cup
Flash Point(C)
45 °C - closed cup
Certificates of Analysis (COA)
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