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264059

Sigma-Aldrich

Indium

foil, thickness 0.127 mm, 99.99% trace metals basis

Synonym(s):

Indium element

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About This Item

Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

Assay

99.99% trace metals basis

form

foil

resistivity

8.37 μΩ-cm

thickness

0.127 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Application

Indium foil is thermal interface material with high conductance that is used in cryogenics. It can also be used as indium vapor source for the preparation of indium nitride nanowires on a silicon substrate. It may also be used in the time of flight secondary ion mass spectroscopy (ToF-SIMS) for the analysis of powder samples.

Quantity

2.3 g = 50 × 50 mm; 9.2 g = 100 × 100 mm

Pictograms

Health hazard

Signal Word

Danger

Hazard Statements

Precautionary Statements

Hazard Classifications

STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer

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