Typically, a volatile Ti compound such as Titanium(IV) isopropoxide (TTIP), TiCl4, Titanium alkoxides, Ti(acac)4, etc., can be used as the precursor for depositing thin films of TiO2 using a PECVD system. It's important to note that different precursors have different boiling points and may result in different surface structures and morphologies.
454516
Tetrakis(trimethylsilyloxy)silane
97%
Synonym(s):
1,1,1,5,5,5-Hexamethyl-3,3-bis[(trimethylsilyl)oxy]trisiloxane, Tetrakis(trimethylsilyl) silicate
About This Item
Recommended Products
Quality Level
Assay
97%
refractive index
n20/D 1.389 (lit.)
bp
103-106 °C/2 mmHg (lit.)
density
0.87 g/mL at 25 °C (lit.)
SMILES string
C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C
InChI
1S/C12H36O4Si5/c1-17(2,3)13-21(14-18(4,5)6,15-19(7,8)9)16-20(10,11)12/h1-12H3
InChI key
VNRWTCZXQWOWIG-UHFFFAOYSA-N
Application
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
10 - Combustible liquids
WGK
WGK 3
Flash Point(F)
168.8 °F - closed cup
Flash Point(C)
76 °C - closed cup
Personal Protective Equipment
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