647675

Silicon

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

• Synonym(s): Silicon element
• Linear Formula: Si
• CAS Number: 7440-21-3
• Molecular Weight: 28.09
• PubChem Substance ID: 24883416
• UNSPSC Code: 12352300
• MDL number: MFCD00085311
• NACRES: NA.23

Properties

• Quality Segment: 100
• form: crystalline (cubic (a = 5.4037)), wafer (single side polished)
• contains: boron as dopant
• greener alternative product characteristics: Design for Energy Efficiency; Learn more about the Principles of Green Chemistry.
• sustainability: Sustainability features
• diam. × thickness: 2 in. × 0.5 mm
• bp: 2355 °C (lit.)
• mp: 1410 °C (lit.)
• density: 2.33 g/mL at 25 °C (lit.)
• semiconductor properties: <100>, P-type
• SMILES string: [Si]
• InChI: 1S/Si
• InChI key: XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Description

General description

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0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3 - 40 Ω•cm

Oxygen content: <= 1~1.8 x 10¹⁸ /cm³; Carbon content: <= 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

Application

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1EA refers to 1 wafer and 5EA refers to 5 wafers

Safety Information

• Storage Class: 13 - Non Combustible Solids
• WGK: nwg
• PPE (personal protective equipment): Eyeshields, Gloves, type N95 (US)