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357391

Sigma-Aldrich

Silicon carbide

−400 mesh particle size, ≥97.5%

Synonym(s):

Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide

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About This Item

Linear Formula:
SiC
CAS Number:
409-21-2
Molecular Weight:
40.10
EC Number:
206-991-8
MDL number:
MFCD00049531
UNSPSC Code:
12352300
PubChem Substance ID:
24861911
NACRES:
NA.23

description

hexagonal phase

Assay

≥97.5%

form

powder

particle size

−400 mesh

mp

2700 °C (lit.)

density

3.22 g/mL at 25 °C (lit.)

SMILES string

[C-]#[Si+]

InChI

1S/CSi/c1-2

InChI key

HBMJWWWQQXIZIP-UHFFFAOYSA-N

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General description

Silicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and optoelectronic applications.

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high temperature electronics (nuclear electronics), and high frequency devices.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Properties of silicon carbide (1995)
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Emanuele Rizzuto et al.
Sensors (Basel, Switzerland), 19(23) (2019-11-27)
In this paper, the characterization of the main techniques and transducers employed to measure local and global strains induced by uniaxial loading of murine tibiae is presented. Micro strain gauges and digital image correlation (DIC) were tested to measure local
High efficiency GaN-based LEDs and lasers on SiC
Edmond J, et al.
Journal of Crystal Growth, 272(1-4), 242-250 (2004)
Development of SiC-Si composites with fine-grained SiC microstructures
Wilhelm M, et al.
J. Eur. Ceram. Soc., 19(12), 2155-2163 (1999)
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